STT3463P -3 a, -60 v, r ds(on) 155 m ? p-channel enhancement mode mosfet elektronische bauelemente 08-apr-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen and lead-free description these miniature surface mount mosfets utilize a high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. features ? low r ds(on) provides higher efficiency and extends battery life. ? miniature tsop-6 surface mount package saves board space. ? high power and current handling capability. ? extended v gs range (25) for battery pack applications. application pwmdc-dc converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. package information package mpq leader size tsop-6 3k 7? inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -60 v gate-source voltage v gs 20 v continuous drain current 1 t a = 25 c i d -3.0 a t a = 70 c -2.4 pulsed drain current 2 i dm -15 a continuous source current (diode conduction) 1 i s -1.7 a power dissipation 1 t a = 25 c p d 2.0 w t a = 70 c 1.3 operating junction and st orage temperature range tj, tstg -55 ~ 150 c thermal resistance ratings maximum junction to ambient 1 t Q 5 sec r ? ja 62.5 c / w 110 notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. d g dd d s ref. millimete r ref. millimete r min. max. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f0.30 0.50 tsop-6 b l f h c j d g k a e 1 23 4 5 6
STT3463P -3 a, -60 v, r ds(on) 155 m ? p-channel enhancement mode mosfet elektronische bauelemente 08-apr-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static gate-threshold voltage v gs(th) -1 - - v v ds = v gs , i d = -250 a gate-body leakage i gss - - 100 na v ds =0, v gs = 20v zero gate voltage drain current i dss - - -1 a v ds = -48v, v gs =0 - - -10 v ds = -48v, v gs =0, t j = 55 c on-state drain current 1 i d(on) -20 - - a v ds = -5v, v gs = -10v drain-source on-resistance 1 r ds(on) - - 155 m ? v gs = -10v, i d = -3a - - 230 v gs = -4.5v, i d = -2.5a forward transconductance 1 g fs - 8 - s v ds = -15v, i d = -3.0a diode forward voltage v sd - - -1.2 v i s = -2.5a, v gs =0 dynamic 2 total gate charge q g - 18 - nc v ds = -30v, v gs = -4.5v, i d = -3a gate-source charge q gs - 5 - gate-drain charge q gd - 2 - turn-on delay time t d(on) - 8 - ns v dd = -30v, v gen = -10v, r l =30 ? , i d = -1a, r g =6 ? rise time t r - 10 - turn-off delay time t d(off) - 35 - fall time t f - 12 - notes: 1. pulse test pw Q 300 us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
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